Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K

Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K

This paper presents an experimental investigation, compact modeling, and low-temperature physics-based modeling of a commercial 28-nm bulk CMOS technology operating at cryogenic temperatures. The physical and technological parameters are extracted at 300, 77, and 4.2 K from dc measurements made on v...

Ausführliche Beschreibung

Bibliographische Detailangaben
Hauptverfasser: Arnout Beckers, Farzan Jazaeri, Christian Enz
Format: Artikel
Sprache:English
Veröffentlicht: IEEE 2018-01-01
Schriftenreihe:IEEE Journal of the Electron Devices Society
Schlagworte:
28 nm bulk CMOS
cryo-CMOS
subthreshold swing
freeze-out
cryoelectronics
cryogenic
Online Zugang:https://ieeexplore.ieee.org/document/8326483/

Online

https://ieeexplore.ieee.org/document/8326483/

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