EOT sub-nanometric and degradation of mobility: moving towards a physical limit with modern manufacturing techniques?
<p>In this article we investigate the major problem of the micro/nano-electronic: How to redu­ce the Equivalent Oxide Thickness (EOT) in the sub-nanometric range and improving the MOSFET performance? To reduce the EOT it is necessary that the semiconductor indus­try introduce t...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Universidad San Francisco de Quito USFQ
2010-06-01
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| Series: | ACI Avances en Ciencias e Ingenierías |
| Subjects: | |
| Online Access: | http://revistas.usfq.edu.ec/index.php/avances/article/view/35 |