The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers
One of the main challenges in realizing 4H–SiC (silicon carbide)-based bipolar devices is the improvement of minority carrier lifetime in as-grown epitaxial layers. Although Z1/2 has been identified as the dominant carrier lifetime limiting defect, we report on B-related centers being another domina...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-03-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0142415 |