Semiconductor Lasers Based on Quantum Well Structures
We present electrical and optical properties of the quantum well laser structures based on InAs / AlxGa1-x As material systems. The experimental results obtained from room- and low temperature electroluminescence measurements of InAs/Al0.40Ga0.60 As revealed the excellent emission spectra in the vis...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
University of Žilina
2003-06-01
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| Series: | Communications |
| Subjects: | |
| Online Access: | https://komunikacie.uniza.sk/artkey/csl-200302-0006_semiconductor-lasers-based-on-quantum-well-structures.php |