Semiconductor Lasers Based on Quantum Well Structures
We present electrical and optical properties of the quantum well laser structures based on InAs / AlxGa1-x As material systems. The experimental results obtained from room- and low temperature electroluminescence measurements of InAs/Al0.40Ga0.60 As revealed the excellent emission spectra in the vis...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
University of Žilina
2003-06-01
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Series: | Communications |
Subjects: | |
Online Access: | https://komunikacie.uniza.sk/artkey/csl-200302-0006_semiconductor-lasers-based-on-quantum-well-structures.php |
Summary: | We present electrical and optical properties of the quantum well laser structures based on InAs / AlxGa1-x As material systems. The experimental results obtained from room- and low temperature electroluminescence measurements of InAs/Al0.40Ga0.60 As revealed the excellent emission spectra in the visible range 620-660 nm. The experimentally obtained transitions energies were compared with simple Kronig-Penney simulations. Going to low temperatures the stimulated emission from the cleaved edge was observed, which could be real perspective for laser applications. |
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ISSN: | 1335-4205 2585-7878 |