Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation
In this letter, a novel approach is presented to overcome issues in AlGaN/GaN high electron mobility transistors (HEMTs), such as metal discontinuity of the gate stemmed from conventional mesa isolation. This usually requires a careful mesa etch process to procure an anisotropic mesa-wall profile. A...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-11-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/13/11/2007 |