Thermal-Electrical finite element analysis of nanometric copper vias under high fluence stress
<p>This paper presents the development of a thermal-electrical finite element (FE) model with the objective to analyze failure mechanisms responsible of physical degradation (void, copper silicate formation, etc.) caused by high fluence stress of 90nm copper vias for FinfET devices. Indeed in...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Universidad San Francisco de Quito USFQ
2013-12-01
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| Series: | ACI Avances en Ciencias e Ingenierías |
| Subjects: | |
| Online Access: | http://revistas.usfq.edu.ec/index.php/avances/article/view/139 |