Engineering Bilayer AlOx /YAlOx Dielectric Stacks for Hysteresis-Free Switching in Solution-Processed Metal-Oxide Thin-Film Transistors

Engineering Bilayer AlOx /YAlOx Dielectric Stacks for Hysteresis-Free Switching in Solution-Processed Metal-Oxide Thin-Film Transistors

Solution processing and low-temperature annealing (T < 300°C) of the precursor compounds promise low-cost manufacturing for future applications of flexible oxide electronics. However, thermal budget reduction comes at the expense of increased charge trapping residuals in the dielectric layers...

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Bibliographic Details
Main Authors: Sami Bolat, Evangelos Agiannis, Shih-Chi Yang, Moritz H. Futscher, Abdesselam Aribia, Ivan Shorubalko, Yaroslav E. Romanyuk
Format: Article
Language:English
Published: Frontiers Media S.A. 2022-01-01
Series:Frontiers in Electronics
Subjects:
solution processing
metal oxides
dielectrics
low temperature curing
charge trapping
thin-film transistor (TFT)
Online Access:https://www.frontiersin.org/articles/10.3389/felec.2021.804474/full

Internet

https://www.frontiersin.org/articles/10.3389/felec.2021.804474/full

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