Engineering Bilayer AlOx /YAlOx Dielectric Stacks for Hysteresis-Free Switching in Solution-Processed Metal-Oxide Thin-Film Transistors
Solution processing and low-temperature annealing (T < 300°C) of the precursor compounds promise low-cost manufacturing for future applications of flexible oxide electronics. However, thermal budget reduction comes at the expense of increased charge trapping residuals in the dielectric layers...
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| Format: | Article |
| Language: | English |
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Frontiers Media S.A.
2022-01-01
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| Series: | Frontiers in Electronics |
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| Online Access: | https://www.frontiersin.org/articles/10.3389/felec.2021.804474/full |
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| author | Sami Bolat Evangelos Agiannis Shih-Chi Yang Moritz H. Futscher Abdesselam Aribia Ivan Shorubalko Yaroslav E. Romanyuk |
| author_facet | Sami Bolat Evangelos Agiannis Shih-Chi Yang Moritz H. Futscher Abdesselam Aribia Ivan Shorubalko Yaroslav E. Romanyuk |
| author_sort | Sami Bolat |
| collection | DOAJ |
| description | Solution processing and low-temperature annealing (T < 300°C) of the precursor compounds promise low-cost manufacturing for future applications of flexible oxide electronics. However, thermal budget reduction comes at the expense of increased charge trapping residuals in the dielectric layers, which result in hysteretic switching of transistors. This work reports on a novel bilayer dielectric scheme combining aluminum oxide (AlOx) as a positive charge trapping insulator and yttrium aluminum oxide (YAlOx) as a negative charge trapping dielectric to obtain hysteresis free switching in the solution-processed metal-oxide thin-film transistors. Devices were processed at a thermal budget of 250°C, without an encapsulation layer. The presence of H+ and OH− in the AlOx were found responsible for the hysteresis in the switching, which was suppressed successfully with the thickness optimization of the YAlOx in the dielectric stack. Fabricated devices yield ON/OFF ratios of 106, sub-pA level gate leakage currents, a subthreshold swing of 150 mV/decade, and field-effect mobility of 1.5 cm2/V-sec. |
| first_indexed | 2024-12-18T04:15:33Z |
| format | Article |
| id | doaj.art-66c16d42af454161a09ce873896cc0ae |
| institution | Directory Open Access Journal |
| issn | 2673-5857 |
| language | English |
| last_indexed | 2024-12-18T04:15:33Z |
| publishDate | 2022-01-01 |
| publisher | Frontiers Media S.A. |
| record_format | Article |
| series | Frontiers in Electronics |
| spelling | doaj.art-66c16d42af454161a09ce873896cc0ae2022-12-21T21:21:21ZengFrontiers Media S.A.Frontiers in Electronics2673-58572022-01-01210.3389/felec.2021.804474804474Engineering Bilayer AlOx /YAlOx Dielectric Stacks for Hysteresis-Free Switching in Solution-Processed Metal-Oxide Thin-Film TransistorsSami Bolat0Evangelos Agiannis1Shih-Chi Yang2Moritz H. Futscher3Abdesselam Aribia4Ivan Shorubalko5Yaroslav E. Romanyuk6Laboratory for Thin Films and Photovoltaics, Empa- Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, SwitzerlandLaboratory for Thin Films and Photovoltaics, Empa- Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, SwitzerlandLaboratory for Thin Films and Photovoltaics, Empa- Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, SwitzerlandLaboratory for Thin Films and Photovoltaics, Empa- Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, SwitzerlandLaboratory for Thin Films and Photovoltaics, Empa- Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, SwitzerlandTransport at Nanoscale Interfaces Laboratory, Empa- Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, SwitzerlandLaboratory for Thin Films and Photovoltaics, Empa- Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, SwitzerlandSolution processing and low-temperature annealing (T < 300°C) of the precursor compounds promise low-cost manufacturing for future applications of flexible oxide electronics. However, thermal budget reduction comes at the expense of increased charge trapping residuals in the dielectric layers, which result in hysteretic switching of transistors. This work reports on a novel bilayer dielectric scheme combining aluminum oxide (AlOx) as a positive charge trapping insulator and yttrium aluminum oxide (YAlOx) as a negative charge trapping dielectric to obtain hysteresis free switching in the solution-processed metal-oxide thin-film transistors. Devices were processed at a thermal budget of 250°C, without an encapsulation layer. The presence of H+ and OH− in the AlOx were found responsible for the hysteresis in the switching, which was suppressed successfully with the thickness optimization of the YAlOx in the dielectric stack. Fabricated devices yield ON/OFF ratios of 106, sub-pA level gate leakage currents, a subthreshold swing of 150 mV/decade, and field-effect mobility of 1.5 cm2/V-sec.https://www.frontiersin.org/articles/10.3389/felec.2021.804474/fullsolution processingmetal oxidesdielectricslow temperature curingcharge trappingthin-film transistor (TFT) |
| spellingShingle | Sami Bolat Evangelos Agiannis Shih-Chi Yang Moritz H. Futscher Abdesselam Aribia Ivan Shorubalko Yaroslav E. Romanyuk Engineering Bilayer AlOx /YAlOx Dielectric Stacks for Hysteresis-Free Switching in Solution-Processed Metal-Oxide Thin-Film Transistors Frontiers in Electronics solution processing metal oxides dielectrics low temperature curing charge trapping thin-film transistor (TFT) |
| title | Engineering Bilayer AlOx /YAlOx Dielectric Stacks for Hysteresis-Free Switching in Solution-Processed Metal-Oxide Thin-Film Transistors |
| title_full | Engineering Bilayer AlOx /YAlOx Dielectric Stacks for Hysteresis-Free Switching in Solution-Processed Metal-Oxide Thin-Film Transistors |
| title_fullStr | Engineering Bilayer AlOx /YAlOx Dielectric Stacks for Hysteresis-Free Switching in Solution-Processed Metal-Oxide Thin-Film Transistors |
| title_full_unstemmed | Engineering Bilayer AlOx /YAlOx Dielectric Stacks for Hysteresis-Free Switching in Solution-Processed Metal-Oxide Thin-Film Transistors |
| title_short | Engineering Bilayer AlOx /YAlOx Dielectric Stacks for Hysteresis-Free Switching in Solution-Processed Metal-Oxide Thin-Film Transistors |
| title_sort | engineering bilayer alox yalox dielectric stacks for hysteresis free switching in solution processed metal oxide thin film transistors |
| topic | solution processing metal oxides dielectrics low temperature curing charge trapping thin-film transistor (TFT) |
| url | https://www.frontiersin.org/articles/10.3389/felec.2021.804474/full |
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