Engineering Bilayer AlOx /YAlOx Dielectric Stacks for Hysteresis-Free Switching in Solution-Processed Metal-Oxide Thin-Film Transistors
Solution processing and low-temperature annealing (T < 300°C) of the precursor compounds promise low-cost manufacturing for future applications of flexible oxide electronics. However, thermal budget reduction comes at the expense of increased charge trapping residuals in the dielectric layers...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Frontiers Media S.A.
2022-01-01
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| Series: | Frontiers in Electronics |
| Subjects: | |
| Online Access: | https://www.frontiersin.org/articles/10.3389/felec.2021.804474/full |