Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs

Abstract In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor deposition can no longer provide sufficient step cove...

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Main Authors: Yen-Wei Yeh, Su-Hui Lin, Tsung-Chi Hsu, Shouqiang Lai, Po-Tsung Lee, Shui-Yang Lien, Dong-Sing Wuu, Guisen Li, Zhong Chen, Tingzhu Wu, Hao-Chung Kuo
Format: Article
Language:English
Published: SpringerOpen 2021-11-01
Series:Nanoscale Research Letters
Subjects:
Online Access:https://doi.org/10.1186/s11671-021-03623-x
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author Yen-Wei Yeh
Su-Hui Lin
Tsung-Chi Hsu
Shouqiang Lai
Po-Tsung Lee
Shui-Yang Lien
Dong-Sing Wuu
Guisen Li
Zhong Chen
Tingzhu Wu
Hao-Chung Kuo
author_facet Yen-Wei Yeh
Su-Hui Lin
Tsung-Chi Hsu
Shouqiang Lai
Po-Tsung Lee
Shui-Yang Lien
Dong-Sing Wuu
Guisen Li
Zhong Chen
Tingzhu Wu
Hao-Chung Kuo
author_sort Yen-Wei Yeh
collection DOAJ
description Abstract In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor deposition can no longer provide sufficient step coverage, the characteristics of atomic layer deposition ALD technology are used to solve this problem. ALD utilizes self-limiting interactions between the precursor gas and the substrate surface. When the reactive gas forms a single layer of chemical adsorbed on the substrate surface, no reaction occurs between them and the growth thickness can be controlled. At the Å level, it can provide good step coverage. In this study, recent research on the ALD passivation on micro-light-emitting diodes and vertical cavity surface emitting lasers was reviewed and compared. Several passivation methods were demonstrated to lead to enhanced light efficiency, reduced leakage, and improved reliability.
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spelling doaj.art-66fda989a7bd4adcb7b64c7c58c6cab22023-09-02T19:38:57ZengSpringerOpenNanoscale Research Letters1556-276X2021-11-0116111410.1186/s11671-021-03623-xAdvanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELsYen-Wei Yeh0Su-Hui Lin1Tsung-Chi Hsu2Shouqiang Lai3Po-Tsung Lee4Shui-Yang Lien5Dong-Sing Wuu6Guisen Li7Zhong Chen8Tingzhu Wu9Hao-Chung Kuo10Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung UniversityFujian Engineering Research Center for Solid-State Lighting, Xiamen University National Integrated Circuit Industry and Education Integration Innovation Platform, School of Electronic Science and Engineering, Xiamen UniversityDepartment of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung UniversityFujian Engineering Research Center for Solid-State Lighting, Xiamen University National Integrated Circuit Industry and Education Integration Innovation Platform, School of Electronic Science and Engineering, Xiamen UniversityDepartment of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung UniversitySchool of Opto-Electronic and Communication Engineering, Xiamen University of TechnologyDepartment of Materials Science and Engineering, National Chung Hsing UniversityUnicompound Semiconductor CorporationFujian Engineering Research Center for Solid-State Lighting, Xiamen University National Integrated Circuit Industry and Education Integration Innovation Platform, School of Electronic Science and Engineering, Xiamen UniversityFujian Engineering Research Center for Solid-State Lighting, Xiamen University National Integrated Circuit Industry and Education Integration Innovation Platform, School of Electronic Science and Engineering, Xiamen UniversityDepartment of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung UniversityAbstract In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor deposition can no longer provide sufficient step coverage, the characteristics of atomic layer deposition ALD technology are used to solve this problem. ALD utilizes self-limiting interactions between the precursor gas and the substrate surface. When the reactive gas forms a single layer of chemical adsorbed on the substrate surface, no reaction occurs between them and the growth thickness can be controlled. At the Å level, it can provide good step coverage. In this study, recent research on the ALD passivation on micro-light-emitting diodes and vertical cavity surface emitting lasers was reviewed and compared. Several passivation methods were demonstrated to lead to enhanced light efficiency, reduced leakage, and improved reliability.https://doi.org/10.1186/s11671-021-03623-xALDMicro-LEDPassivationVCSELReliability
spellingShingle Yen-Wei Yeh
Su-Hui Lin
Tsung-Chi Hsu
Shouqiang Lai
Po-Tsung Lee
Shui-Yang Lien
Dong-Sing Wuu
Guisen Li
Zhong Chen
Tingzhu Wu
Hao-Chung Kuo
Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs
Nanoscale Research Letters
ALD
Micro-LED
Passivation
VCSEL
Reliability
title Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs
title_full Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs
title_fullStr Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs
title_full_unstemmed Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs
title_short Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs
title_sort advanced atomic layer deposition technologies for micro leds and vcsels
topic ALD
Micro-LED
Passivation
VCSEL
Reliability
url https://doi.org/10.1186/s11671-021-03623-x
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