Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC

Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC

<p>Abstract</p> <p>This work reports a nanoscale electro-structural characterisation of Ti/Al ohmic contacts formed on p-type Al-implanted silicon carbide (4H-SiC). The morphological and the electrical properties of the Al-implanted layer, annealed at 1700&#176;C with or withou...

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Bibliographic Details
Main Authors: Saggio Mario, Zanetti Edoardo, Frazzetto Alessia, Giannazzo Filippo, Lo Nigro Raffaella, Di Franco Salvatore, Bongiorno Corrado, Raineri Vito, Roccaforte Fabrizio
Format: Article
Language:English
Published: SpringerOpen 2011-01-01
Series:Nanoscale Research Letters
Online Access:http://www.nanoscalereslett.com/content/6/1/158

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http://www.nanoscalereslett.com/content/6/1/158

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