On the Thermal Models for Resistive Random Access Memory Circuit Simulation

On the Thermal Models for Resistive Random Access Memory Circuit Simulation

Resistive Random Access Memories (RRAMs) are based on resistive switching (RS) operation and exhibit a set of technological features that make them ideal candidates for applications related to non-volatile memories, neuromorphic computing and hardware cryptography. For the full industrial developmen...

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Bibliographic Details
Main Authors: Juan B. Roldán, Gerardo González-Cordero, Rodrigo Picos, Enrique Miranda, Félix Palumbo, Francisco Jiménez-Molinos, Enrique Moreno, David Maldonado, Santiago B. Baldomá, Mohamad Moner Al Chawa, Carol de Benito, Stavros G. Stavrinides, Jordi Suñé, Leon O. Chua
Format: Article
Language:English
Published: MDPI AG 2021-05-01
Series:Nanomaterials
Subjects:
resistive memories
thermal model
heat equation
thermal conductivity
circuit simulation
compact modeling
Online Access:https://www.mdpi.com/2079-4991/11/5/1261

Internet

https://www.mdpi.com/2079-4991/11/5/1261

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