Epitaxial stabilization of single phase κ-(InxGa1−x)2O3 thin films up to x = 0.28 on c-sapphire and κ-Ga2O3(001) templates by tin-assisted VCCS-PLD
High-quality (InxGa1−x)2O3 thin films in the orthorhombic κ-phase were grown by pulsed-laser deposition (PLD) on c-sapphire substrates as well as PLD-grown κ-Ga2O3 thin film templates. We varied the In-content 0 ≤ x ≤ 0.38 of the layers using a single, elliptically segmented, and tin-doped (In0.4Ga0...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-10-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5120578 |