Positive Bias Temperature Instability in SiC-Based Power MOSFETs

Positive Bias Temperature Instability in SiC-Based Power MOSFETs

This paper investigates the threshold voltage shift (ΔV<sub>TH</sub>) induced by positive bias temperature instability (PBTI) in silicon carbide (SiC) power MOSFETs. By analyzing ΔV<sub>TH</sub> under various gate stress voltages (V<sub>Gstress</sub>) at 150 °C, d...

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Bibliographic Details
Main Authors: Vladislav Volosov, Santina Bevilacqua, Laura Anoldo, Giuseppe Tosto, Enzo Fontana, Alfio-lip Russo, Claudio Fiegna, Enrico Sangiorgi, Andrea Natale Tallarico
Format: Article
Language:English
Published: MDPI AG 2024-06-01
Series:Micromachines
Subjects:
silicon carbide MOSFETs
threshold voltage instability
V<sub>TH</sub> characterization
trapping/de-trapping mechanisms
defects
reliability
Online Access:https://www.mdpi.com/2072-666X/15/7/872

Internet

https://www.mdpi.com/2072-666X/15/7/872

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