Gateless and Capacitorless Germanium Biristor with a Vertical Pillar Structure

Gateless and Capacitorless Germanium Biristor with a Vertical Pillar Structure

For the first time, a novel germanium (Ge) bi-stable resistor (biristor) with a vertical pillar structure was implemented on a bulk substrate. The basic structure of the Ge pillar-typed biristor is a p-n-p bipolar junction transistor (BJT) with an open base (floating), which is equivalent to a gatel...

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Bibliographic Details
Main Authors: Hagyoul Bae, Geon-Beom Lee, Jae Hur, Jun-Young Park, Da-Jin Kim, Myung-Su Kim, Yang-Kyu Choi
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Micromachines
Subjects:
Ge biristor
vertical memory
amorphous carbon layer
gateless structure
capacitorless structure
DRAM
Online Access:https://www.mdpi.com/2072-666X/12/8/899

Internet

https://www.mdpi.com/2072-666X/12/8/899

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