Characterization of Cu-doped (Ni,Mn)3O4 thin films annealed at low temperatures
Negative-temperature coefficient of resistance (NTCR) thin films were prepared from (Ni0.2Mn2.8-xCux)Cl2 (0.010 ≤ x ≤ 0.040) solutions by liquid flow deposition (LFD) method. Influence of the Cu on the structural and electrical properties of the films annealed at °400°C was studied. It was found tha...
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2020-07-01
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| Series: | Journal of Asian Ceramic Societies |
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| Online Access: | http://dx.doi.org/10.1080/21870764.2020.1789290 |
| _version_ | 1818725208088903680 |
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| author | Duc Thang Le Jeong Ho Cho Heongkyu Ju |
| author_facet | Duc Thang Le Jeong Ho Cho Heongkyu Ju |
| author_sort | Duc Thang Le |
| collection | DOAJ |
| description | Negative-temperature coefficient of resistance (NTCR) thin films were prepared from (Ni0.2Mn2.8-xCux)Cl2 (0.010 ≤ x ≤ 0.040) solutions by liquid flow deposition (LFD) method. Influence of the Cu on the structural and electrical properties of the films annealed at °400°C was studied. It was found that the incorporation of copper (Cu) promoted an increase in both the crystallinity and grain size of the films. As Cu level increased, the absolute negative temperature coefficient of resistance (TCR) of the films was slightly decreased from 3.21% to 2.38%K−1. On the other hand, the electrical resistivity (ρ) of the films significantly dropped with an increase of Cu, which was attributed to the improved carrier concentration rather than the enlarged grain size. The best electrical performance with ρ ~ 200 Ωcm was achieved in the film with x = 0.025 at room temperature. We provide the discussion on the conduction mechanism, particularly, for the high conduction behavior of the films via the changes of oxidation states of the manganese. |
| first_indexed | 2024-12-17T21:38:39Z |
| format | Article |
| id | doaj.art-676bd27a1463412ca911a91a4a361c76 |
| institution | Directory Open Access Journal |
| issn | 2187-0764 |
| language | English |
| last_indexed | 2024-12-17T21:38:39Z |
| publishDate | 2020-07-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Journal of Asian Ceramic Societies |
| spelling | doaj.art-676bd27a1463412ca911a91a4a361c762022-12-21T21:31:40ZengTaylor & Francis GroupJournal of Asian Ceramic Societies2187-07642020-07-018381482610.1080/21870764.2020.17892901789290Characterization of Cu-doped (Ni,Mn)3O4 thin films annealed at low temperaturesDuc Thang Le0Jeong Ho Cho1Heongkyu Ju2Gachon UniversityKorea Institute of Ceramic Engineering and TechnologyGachon UniversityNegative-temperature coefficient of resistance (NTCR) thin films were prepared from (Ni0.2Mn2.8-xCux)Cl2 (0.010 ≤ x ≤ 0.040) solutions by liquid flow deposition (LFD) method. Influence of the Cu on the structural and electrical properties of the films annealed at °400°C was studied. It was found that the incorporation of copper (Cu) promoted an increase in both the crystallinity and grain size of the films. As Cu level increased, the absolute negative temperature coefficient of resistance (TCR) of the films was slightly decreased from 3.21% to 2.38%K−1. On the other hand, the electrical resistivity (ρ) of the films significantly dropped with an increase of Cu, which was attributed to the improved carrier concentration rather than the enlarged grain size. The best electrical performance with ρ ~ 200 Ωcm was achieved in the film with x = 0.025 at room temperature. We provide the discussion on the conduction mechanism, particularly, for the high conduction behavior of the films via the changes of oxidation states of the manganese.http://dx.doi.org/10.1080/21870764.2020.1789290liquid flow depositionthin filmsspinelsnickel-copper-manganitesolution processir sensors |
| spellingShingle | Duc Thang Le Jeong Ho Cho Heongkyu Ju Characterization of Cu-doped (Ni,Mn)3O4 thin films annealed at low temperatures Journal of Asian Ceramic Societies liquid flow deposition thin films spinels nickel-copper-manganite solution process ir sensors |
| title | Characterization of Cu-doped (Ni,Mn)3O4 thin films annealed at low temperatures |
| title_full | Characterization of Cu-doped (Ni,Mn)3O4 thin films annealed at low temperatures |
| title_fullStr | Characterization of Cu-doped (Ni,Mn)3O4 thin films annealed at low temperatures |
| title_full_unstemmed | Characterization of Cu-doped (Ni,Mn)3O4 thin films annealed at low temperatures |
| title_short | Characterization of Cu-doped (Ni,Mn)3O4 thin films annealed at low temperatures |
| title_sort | characterization of cu doped ni mn 3o4 thin films annealed at low temperatures |
| topic | liquid flow deposition thin films spinels nickel-copper-manganite solution process ir sensors |
| url | http://dx.doi.org/10.1080/21870764.2020.1789290 |
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