Graphenic Carbon: A Novel Material to Improve the Reliability of Metal-Silicon Contacts
Contact resistance and thermal degradation of metal-silicon contacts are major challenges in nanoscale CMOS as well as in power device applications. Titanium silicide (TiSi) is commonly used to establish low-barrier height contacts to silicon, in state-of-the-art FinFETs or Schottky diodes. But the...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7972947/ |