A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor
Abstract A bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional as...
| Main Authors: | , , , , , |
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| 格式: | 文件 |
| 语言: | English |
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SpringerOpen
2021-06-01
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| 丛编: | Nanoscale Research Letters |
| 主题: | |
| 在线阅读: | https://doi.org/10.1186/s11671-021-03561-8 |
| 总结: | Abstract A bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional asymmetrical TFET. The effects of the structural parameters, e.g., the doping concentrations of the N+ region and P+ region, length of the N+ region and length of the intrinsic region, on the device performances, e.g., the transfer characteristics, I on–I off ratio and subthreshold swing, and the internal mechanism are discussed and explained in detail. |
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| ISSN: | 1556-276X |