Microwave Whispering-Gallery-Mode Photoconductivity Measurement of Recombination Lifetime in Silicon

We present a whispering-gallery-mode resonance-enhanced microwave-detected photoconductivity-decay method for contactless measurement of recombination lifetime in highresistivity semiconductor layers. We applied the method to undoped Silicon wafers of high resistivity at 5 and 30 kOhm*cm and measure...

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Bibliographic Details
Main Authors: V. Yurchenko, T. S. Navruz, M. Ciydem, A. Altintas
Format: Article
Language:English
Published: Advanced Electromagnetics 2019-05-01
Series:Advanced Electromagnetics
Subjects:
Online Access:https://aemjournal.org/index.php/AEM/article/view/1127
Description
Summary:We present a whispering-gallery-mode resonance-enhanced microwave-detected photoconductivity-decay method for contactless measurement of recombination lifetime in highresistivity semiconductor layers. We applied the method to undoped Silicon wafers of high resistivity at 5 and 30 kOhm*cm and measured the conductivity relaxation times of 10 and 14 microseconds, respectively. In wafers being considered, they are supposed to be defined by the electron-hole diffusion from the bulk to the wafer surfaces.
ISSN:2119-0275