A GaN-HEMT Active Drain-Pumped Mixer for S-Band FMCW Radar Front-End Applications

A GaN-HEMT Active Drain-Pumped Mixer for S-Band FMCW Radar Front-End Applications

This paper reports for the first time a drain-pumped (DP) mixer using Gallium Nitride (GaN) HEMT technology. Specifically, it describes a method aimed to predict the optimum bias conditions for active DP-mixers, leading to high conversion gain (CG) and linearity, along with the efficient use of the...

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Bibliographic Details
Main Authors: Lorenzo Pagnini, Giovanni Collodi, Alessandro Cidronali
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Series:Sensors
Subjects:
Volterra analysis
GaN devices
mixers
FMCW radar
Online Access:https://www.mdpi.com/1424-8220/23/9/4479

Internet

https://www.mdpi.com/1424-8220/23/9/4479

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