Low-temperature copper–copper quasi-direct bonding with cobalt passivation layer
In this work, an ultra-thin cobalt film is used as a passivation layer to achieve a Cu–Cu quasi-direct bonding process, and successful bonding was achieved at the bonding temperature of 230 °C with the bonding pressure of 0.5 MPa in non-vacuum conditions. A tensile bonding strength of over 12.8 MPa...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0108693 |