Necking Reduction at Low Temperature in Aspect Ratio Etching of SiO<sub>2</sub> at CF<sub>4</sub>/H<sub>2</sub>/Ar Plasma

Necking Reduction at Low Temperature in Aspect Ratio Etching of SiO<sub>2</sub> at CF<sub>4</sub>/H<sub>2</sub>/Ar Plasma

This study investigated the effect of temperature on the aspect-ratio etching of SiO<sub>2</sub> in CF<sub>4</sub>/H<sub>2</sub>/Ar plasma using patterned samples of a 200 nm trench in a low-temperature reactive-ion etching system. Lower temperatures resulted in h...

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Bibliographic Details
Main Authors: Hee-Tae Kwon, In-Young Bang, Jae-Hyeon Kim, Hyeon-Jo Kim, Seong-Yong Lim, Seo-Yeon Kim, Seong-Hee Cho, Ji-Hwan Kim, Woo-Jae Kim, Gi-Won Shin, Gi-Chung Kwon
Format: Article
Language:English
Published: MDPI AG 2024-01-01
Series:Nanomaterials
Subjects:
low temperature
plasma etching
high aspect ratio
necking ratio
SiO<sub>2</sub>
trench
Online Access:https://www.mdpi.com/2079-4991/14/2/209

Internet

https://www.mdpi.com/2079-4991/14/2/209

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