Necking Reduction at Low Temperature in Aspect Ratio Etching of SiO<sub>2</sub> at CF<sub>4</sub>/H<sub>2</sub>/Ar Plasma
This study investigated the effect of temperature on the aspect-ratio etching of SiO<sub>2</sub> in CF<sub>4</sub>/H<sub>2</sub>/Ar plasma using patterned samples of a 200 nm trench in a low-temperature reactive-ion etching system. Lower temperatures resulted in h...
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MDPI AG
2024-01-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/14/2/209 |
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| author | Hee-Tae Kwon In-Young Bang Jae-Hyeon Kim Hyeon-Jo Kim Seong-Yong Lim Seo-Yeon Kim Seong-Hee Cho Ji-Hwan Kim Woo-Jae Kim Gi-Won Shin Gi-Chung Kwon |
| author_facet | Hee-Tae Kwon In-Young Bang Jae-Hyeon Kim Hyeon-Jo Kim Seong-Yong Lim Seo-Yeon Kim Seong-Hee Cho Ji-Hwan Kim Woo-Jae Kim Gi-Won Shin Gi-Chung Kwon |
| author_sort | Hee-Tae Kwon |
| collection | DOAJ |
| description | This study investigated the effect of temperature on the aspect-ratio etching of SiO<sub>2</sub> in CF<sub>4</sub>/H<sub>2</sub>/Ar plasma using patterned samples of a 200 nm trench in a low-temperature reactive-ion etching system. Lower temperatures resulted in higher etch rates and aspect ratios for SiO<sub>2</sub>. However, the plasma property was constant with the chuck temperature, indicated by the line intensity ratio from optical emission spectroscopy monitoring of the plasma. The variables obtained from the characterization of the etched profile for the 200 nm trench after etching were analyzed as a function of temperature. A reduction in the necking ratio affected the etch rate and aspect ratio of SiO<sub>2</sub>. The etching mechanism of the aspect ratio etching of SiO<sub>2</sub> was discussed based on the results of the surface composition at necking via energy-dispersive X-ray spectroscopy with temperature. The results suggested that the neutral species reaching the etch front of SiO<sub>2</sub> had a low sticking coefficient. The bowing ratio decreased with lowering temperature, indicating the presence of directional ions during etching. Therefore, a lower temperature for the aspect ratio etching of SiO<sub>2</sub> could achieve a faster etch rate and a higher aspect ratio of SiO<sub>2</sub> via the reduction of necking than higher temperatures. |
| first_indexed | 2024-03-08T10:39:20Z |
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| id | doaj.art-67d0432f2d594cf39879c0f865a12bfd |
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| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-08T10:39:20Z |
| publishDate | 2024-01-01 |
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| series | Nanomaterials |
| spelling | doaj.art-67d0432f2d594cf39879c0f865a12bfd2024-01-26T17:58:41ZengMDPI AGNanomaterials2079-49912024-01-0114220910.3390/nano14020209Necking Reduction at Low Temperature in Aspect Ratio Etching of SiO<sub>2</sub> at CF<sub>4</sub>/H<sub>2</sub>/Ar PlasmaHee-Tae Kwon0In-Young Bang1Jae-Hyeon Kim2Hyeon-Jo Kim3Seong-Yong Lim4Seo-Yeon Kim5Seong-Hee Cho6Ji-Hwan Kim7Woo-Jae Kim8Gi-Won Shin9Gi-Chung Kwon10Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of KoreaDepartment of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of KoreaDepartment of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of KoreaDepartment of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of KoreaDepartment of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of KoreaDepartment of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of KoreaDepartment of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of KoreaDepartment of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of KoreaDepartment of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of KoreaDepartment of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of KoreaDepartment of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Republic of KoreaThis study investigated the effect of temperature on the aspect-ratio etching of SiO<sub>2</sub> in CF<sub>4</sub>/H<sub>2</sub>/Ar plasma using patterned samples of a 200 nm trench in a low-temperature reactive-ion etching system. Lower temperatures resulted in higher etch rates and aspect ratios for SiO<sub>2</sub>. However, the plasma property was constant with the chuck temperature, indicated by the line intensity ratio from optical emission spectroscopy monitoring of the plasma. The variables obtained from the characterization of the etched profile for the 200 nm trench after etching were analyzed as a function of temperature. A reduction in the necking ratio affected the etch rate and aspect ratio of SiO<sub>2</sub>. The etching mechanism of the aspect ratio etching of SiO<sub>2</sub> was discussed based on the results of the surface composition at necking via energy-dispersive X-ray spectroscopy with temperature. The results suggested that the neutral species reaching the etch front of SiO<sub>2</sub> had a low sticking coefficient. The bowing ratio decreased with lowering temperature, indicating the presence of directional ions during etching. Therefore, a lower temperature for the aspect ratio etching of SiO<sub>2</sub> could achieve a faster etch rate and a higher aspect ratio of SiO<sub>2</sub> via the reduction of necking than higher temperatures.https://www.mdpi.com/2079-4991/14/2/209low temperatureplasma etchinghigh aspect rationecking ratioSiO<sub>2</sub>trench |
| spellingShingle | Hee-Tae Kwon In-Young Bang Jae-Hyeon Kim Hyeon-Jo Kim Seong-Yong Lim Seo-Yeon Kim Seong-Hee Cho Ji-Hwan Kim Woo-Jae Kim Gi-Won Shin Gi-Chung Kwon Necking Reduction at Low Temperature in Aspect Ratio Etching of SiO<sub>2</sub> at CF<sub>4</sub>/H<sub>2</sub>/Ar Plasma Nanomaterials low temperature plasma etching high aspect ratio necking ratio SiO<sub>2</sub> trench |
| title | Necking Reduction at Low Temperature in Aspect Ratio Etching of SiO<sub>2</sub> at CF<sub>4</sub>/H<sub>2</sub>/Ar Plasma |
| title_full | Necking Reduction at Low Temperature in Aspect Ratio Etching of SiO<sub>2</sub> at CF<sub>4</sub>/H<sub>2</sub>/Ar Plasma |
| title_fullStr | Necking Reduction at Low Temperature in Aspect Ratio Etching of SiO<sub>2</sub> at CF<sub>4</sub>/H<sub>2</sub>/Ar Plasma |
| title_full_unstemmed | Necking Reduction at Low Temperature in Aspect Ratio Etching of SiO<sub>2</sub> at CF<sub>4</sub>/H<sub>2</sub>/Ar Plasma |
| title_short | Necking Reduction at Low Temperature in Aspect Ratio Etching of SiO<sub>2</sub> at CF<sub>4</sub>/H<sub>2</sub>/Ar Plasma |
| title_sort | necking reduction at low temperature in aspect ratio etching of sio sub 2 sub at cf sub 4 sub h sub 2 sub ar plasma |
| topic | low temperature plasma etching high aspect ratio necking ratio SiO<sub>2</sub> trench |
| url | https://www.mdpi.com/2079-4991/14/2/209 |
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