Microstructures of HfO<sub>x</sub> Films Prepared via Atomic Layer Deposition Using La(NO<sub>3</sub>)<sub>3</sub>·6H<sub>2</sub>O Oxidants

Microstructures of HfO<sub>x</sub> Films Prepared via Atomic Layer Deposition Using La(NO<sub>3</sub>)<sub>3</sub>·6H<sub>2</sub>O Oxidants

Hafnium oxide (HfO<sub>x</sub>) films have a wide range of applications in solid-state devices, including metal–oxide–semiconductor field-effect transistors (MOSFETs). The growth of HfO<sub>x</sub> films from the metal precursor tetrakis(ethylmethylamino) hafnium with La(NO&l...

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Bibliographic Details
Main Authors: Seon Yong Kim, Yong Chan Jung, Sejong Seong, Taehoon Lee, In-Sung Park, Jinho Ahn
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Materials
Subjects:
hafnium oxide film
atomic layer deposition
MOSFET
Online Access:https://www.mdpi.com/1996-1944/14/23/7478

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https://www.mdpi.com/1996-1944/14/23/7478

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