Interface Characteristics of Sapphire Direct Bonding for High-Temperature Applications

Interface Characteristics of Sapphire Direct Bonding for High-Temperature Applications

In this letter, we present a sapphire direct bonding method using plasma surface activation, hydrophilic pre-bonding, and high temperature annealing. Through the combination of sapphire inductively coupled plasma etching and the direct bonding process, a vacuum-sealed cavity employable for high temp...

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Bibliographic Details
Main Authors: Wangwang Li, Ting Liang, Yulei Chen, Pinggang Jia, Jijun Xiong, Yingping Hong, Cheng Lei, Zong Yao, Lei Qi, Wenyi Liu
Format: Article
Language:English
Published: MDPI AG 2017-09-01
Series:Sensors
Subjects:
sapphire
direct bonding
vacuum-sealed cavity
pressure sensor
high temperature
Online Access:https://www.mdpi.com/1424-8220/17/9/2080

Internet

https://www.mdpi.com/1424-8220/17/9/2080

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