A PLANAR n⁺ –n–n⁺ GaAs DIODE WITH GaInAs-BASED GRADED-GAP ACTIVE SIDE BOUNDARYN
Subject and Purpose. The generation of millimeter-wave oscillations by a planar GaAs diode with active side boundary (ASB) is considered. The diode structure is placed on a semiconductor semi-insulating substrate and represents a GaAs channel approximately 1μm long. Its lateral surface carries a sem...
| 主要な著者: | , , |
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| フォーマット: | 論文 |
| 言語: | English |
| 出版事項: |
National Academy of Sciences of Ukraine, Institute of Radio Astronomy
2024-12-01
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| シリーズ: | Radio Physics and Radio Astronomy |
| 主題: | |
| オンライン･アクセス: | http://rpra-journal.org.ua/index.php/ra/article/view/1457/pdf |