A PLANAR n⁺ –n–n⁺ GaAs DIODE WITH GaInAs-BASED GRADED-GAP ACTIVE SIDE BOUNDARYN
Subject and Purpose. The generation of millimeter-wave oscillations by a planar GaAs diode with active side boundary (ASB) is considered. The diode structure is placed on a semiconductor semi-insulating substrate and represents a GaAs channel approximately 1μm long. Its lateral surface carries a sem...
| Những tác giả chính: | , , |
|---|---|
| Định dạng: | Bài viết |
| Ngôn ngữ: | English |
| Được phát hành: |
National Academy of Sciences of Ukraine, Institute of Radio Astronomy
2024-12-01
|
| Loạt: | Radio Physics and Radio Astronomy |
| Những chủ đề: | |
| Truy cập trực tuyến: | http://rpra-journal.org.ua/index.php/ra/article/view/1457/pdf |