A PLANAR n⁺ –n–n⁺ GaAs DIODE WITH GaInAs-BASED GRADED-GAP ACTIVE SIDE BOUNDARYN
Subject and Purpose. The generation of millimeter-wave oscillations by a planar GaAs diode with active side boundary (ASB) is considered. The diode structure is placed on a semiconductor semi-insulating substrate and represents a GaAs channel approximately 1μm long. Its lateral surface carries a sem...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
National Academy of Sciences of Ukraine, Institute of Radio Astronomy
2024-12-01
|
| Series: | Radio Physics and Radio Astronomy |
| Subjects: | |
| Online Access: | http://rpra-journal.org.ua/index.php/ra/article/view/1457/pdf |