Compact Trap-Assisted-Tunneling Model for Line Tunneling Field-Effect-Transistor Devices
Trap-assisted-tunneling (TAT) is a well-documented source of severe subthreshold degradation in tunneling field-effect-transistors (TFET). However, the literature lacks in numerical or compact TAT models applied to TFET devices. This work presents a compact formulation of the Schenk TAT model that i...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-06-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/10/13/4475 |