The Optimization of NiO Doping, Thickness, and Extension in kV-Class NiO/Ga<sub>2</sub>O<sub>3</sub> Vertical Rectifiers

The Optimization of NiO Doping, Thickness, and Extension in kV-Class NiO/Ga<sub>2</sub>O<sub>3</sub> Vertical Rectifiers

Ga<sub>2</sub>O<sub>3</sub> heterojunction rectifiers have emerged as a novel candidate for various power conversion applications by using NiO as the solution on the p-type side. In this work, the optimized design of high-breakdown (1–7 kV), vertical geometry NiO/Ga<sub>...

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Bibliographic Details
Main Authors: Chao-Ching Chiang, Jian-Sian Li, Hsiao-Hsuan Wan, Fan Ren, Stephen J. Pearton
Format: Article
Language:English
Published: MDPI AG 2023-07-01
Series:Crystals
Subjects:
TCAD simulation
NiO
Ga<sub>2</sub>O<sub>3</sub> rectifiers
high breakdown
Online Access:https://www.mdpi.com/2073-4352/13/7/1124

Internet

https://www.mdpi.com/2073-4352/13/7/1124

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