Effect of Growth Temperature on Crystallization of Ge<sub>1−x</sub>Sn<sub>x</sub> Films by Magnetron Sputtering
Ge<sub>1−x</sub>Sn<sub>x</sub> film with Sn content (at%) as high as 13% was grown on Si (100) substrate with Ge buffer layer by magnetron sputtering epitaxy. According to the analysis of HRXRD and Raman spectrum, the quality of the Ge<sub>1−x</sub>Sn<sub>x&...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-12-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/12/12/1810 |