InAs/InP/InSb Nanowires as Low Capacitance n-n Heterojunction Diodes
Nanowire diodes have been realized by employing an axial heterojunction between InAs and InSb semiconductor materials. The broken-gap band alignment (type III) leads to a strong rectification effect when the current-voltage (I-V) characteristic is inspected at room temperature. The additional insert...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2011-08-01
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| Series: | Physical Review X |
| Online Access: | http://doi.org/10.1103/PhysRevX.1.011006 |