Mixed polytype/polymorph formation in InSe films grown by molecular beam epitaxy on GaAs(111)B

Mixed polytype/polymorph formation in InSe films grown by molecular beam epitaxy on GaAs(111)B

Abstract We report the growth of InSe films on semi-insulating GaAs(111)B substrates by molecular beam epitaxy (MBE). Excellent nucleation behavior resulted in the growth of smooth, single-phase InSe films. The dominant polytype was the targeted γ-InSe. Transmission electron microscopy revealed the...

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Bibliographic Details
Main Authors: Maria Hilse, Justin Rodriguez, Jennifer Gray, Jinyuan Yao, Shaoqing Ding, Derrick Shao Heng Liu, Mo Li, Joshua Young, Ying Liu, Roman Engel-Herbert
Format: Article
Language:English
Published: Nature Portfolio 2025-02-01
Series:npj 2D Materials and Applications
Online Access:https://doi.org/10.1038/s41699-025-00535-7

Internet

https://doi.org/10.1038/s41699-025-00535-7

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