GaPO<sub>4</sub> Single Crystals: Growth Condition by Hydrothermal Refluxing Method

GaPO<sub>4</sub> Single Crystals: Growth Condition by Hydrothermal Refluxing Method

Bulk GaPO<sub>4</sub> is an advanced piezoelectric material operating under high temperatures according to the α-β phase transition at 970 °C. This work presents the technological development of a hydrothermal refluxing method first applied for GaPO<sub>4</sub> single crystal...

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Bibliographic Details
Main Authors: Denis Balitsky, Etienne Philippot, Vladimir Balitsky, Ludmila Balitskaya, Tatiana Setkova, Tatiana Bublikova, Philippe Papet
Format: Article
Language:English
Published: MDPI AG 2020-10-01
Series:Molecules
Subjects:
piezoelectric crystals
gallium orthophosphate
crystal growth
hydrothermal method
Online Access:https://www.mdpi.com/1420-3049/25/19/4518

Internet

https://www.mdpi.com/1420-3049/25/19/4518

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