Effects of Oxygen Flow during Fabrication by Magnetron Sputtering on Structure and Performance of Zr-Doped HfO<sub>2</sub> Thin Films

Effects of Oxygen Flow during Fabrication by Magnetron Sputtering on Structure and Performance of Zr-Doped HfO<sub>2</sub> Thin Films

Oxygen defects in Hafnium Oxide (HfO<sub>2</sub>)-based ferroelectric thin films not only are related to the cause of ferroelectricity but also affect the ferroelectric properties of the thin films. This paper, therefore, focuses on the fabrication of Zr:HfO<sub>2</sub> thin...

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Bibliographic Details
Main Authors: Yingxue Xi, Lei Liu, Jiwu Zhao, Xinhui Qin, Jin Zhang, Changming Zhang, Weiguo Liu
Format: Article
Language:English
Published: MDPI AG 2023-08-01
Series:Materials
Subjects:
magnetron sputtering
hafnium oxide-based heterojunction
ferroelectric thin film
oxygen mass flux
Zr-doped
Online Access:https://www.mdpi.com/1996-1944/16/16/5559

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https://www.mdpi.com/1996-1944/16/16/5559

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