Effects of Oxygen Flow during Fabrication by Magnetron Sputtering on Structure and Performance of Zr-Doped HfO<sub>2</sub> Thin Films
Oxygen defects in Hafnium Oxide (HfO<sub>2</sub>)-based ferroelectric thin films not only are related to the cause of ferroelectricity but also affect the ferroelectric properties of the thin films. This paper, therefore, focuses on the fabrication of Zr:HfO<sub>2</sub> thin...
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2023-08-01
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Series: | Materials |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1944/16/16/5559 |