Investigating the Behavior of Thin-Film Formation over Time as a Function of Precursor Concentration and Gas Residence Time in Nitrogen Dielectric Barrier Discharge

This study aims to establish a correlation between the fragmentation process and the growth mechanisms of a coating deposited on a fluoropolymer. Deposition was carried out using dielectric barrier discharge at atmospheric pressure, employing an oxygen-containing organic precursor in a nitrogen envi...

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Bibliographic Details
Main Authors: Faegheh Fotouhiardakani, Alex Destrieux, Jacopo Profili, Morgane Laurent, Sethumadhavan Ravichandran, Gowri Dorairaju, Gaetan Laroche
Format: Article
Language:English
Published: MDPI AG 2024-02-01
Series:Materials
Subjects:
Online Access:https://www.mdpi.com/1996-1944/17/4/875
Description
Summary:This study aims to establish a correlation between the fragmentation process and the growth mechanisms of a coating deposited on a fluoropolymer. Deposition was carried out using dielectric barrier discharge at atmospheric pressure, employing an oxygen-containing organic precursor in a nitrogen environment. The findings reveal that the impact of precursor concentration on the formation of specific functionalities is more significant than the influence of treatment time. The X-ray photoelectron spectroscopy (XPS) results obtained indicate a reduction in the N/O ratio on the coating’s surface as the precursor concentration in the discharge increases. Fourier transform infrared spectroscopy (FTIR) analysis, conducted in the spectral range of 1500 cm<sup>−1</sup> to 1800 cm<sup>−1</sup>, confirmed the connection between the chemical properties of plasma-deposited thin films and the concentration of organic precursors in the discharge. Furthermore, the emergence of nitrile moieties (C≡N) in the FTIR spectrum at 2160 cm<sup>−1</sup> was noted under specific experimental conditions.
ISSN:1996-1944