Simulation of FDSOI-ISFET with Tunable Sensitivity by Temperature and Dual-Gate Structure
This work investigates the different sensitivities of an ion-sensitive field-effect transistor (ISFET) based on fully depleted silicon-on-insulator (FDSOI). Using computer-aided design (TCAD) tools, the sensitivity of a single-gate FDSOI based ISFET (FDSOI-ISFET) at different temperatures and the ef...
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| Format: | Article |
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MDPI AG
2021-06-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/10/13/1585 |
| _version_ | 1797528131288956928 |
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| author | Hanbin Wang Jinshun Bi Mengxin Liu Tingting Han |
| author_facet | Hanbin Wang Jinshun Bi Mengxin Liu Tingting Han |
| author_sort | Hanbin Wang |
| collection | DOAJ |
| description | This work investigates the different sensitivities of an ion-sensitive field-effect transistor (ISFET) based on fully depleted silicon-on-insulator (FDSOI). Using computer-aided design (TCAD) tools, the sensitivity of a single-gate FDSOI based ISFET (FDSOI-ISFET) at different temperatures and the effects of the planar dual-gate structure on the sensitivity are determined. It is found that the sensitivity increases linearly with increasing temperature, reaching 890 mV/pH at 75 °C. By using a dual-gate structure and adjusting the control gate voltage, the sensitivity can be reduced from 750 mV/pH at 0 V control gate voltage to 540 mV/pH at 1 V control gate voltage. The above sensitivity changes are produced because the Nernst limit changes with temperature or the electric field generated by different control gate voltages causes changes in the carrier movement. It is proved that a single FDSOI-ISFET can have adjustable sensitivity by adjusting the operating temperature or the control gate voltage of the dual-gate device. |
| first_indexed | 2024-03-10T09:53:45Z |
| format | Article |
| id | doaj.art-68eaed08add74045b8c9aaf829c833c2 |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-10T09:53:45Z |
| publishDate | 2021-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-68eaed08add74045b8c9aaf829c833c22023-11-22T02:30:35ZengMDPI AGElectronics2079-92922021-06-011013158510.3390/electronics10131585Simulation of FDSOI-ISFET with Tunable Sensitivity by Temperature and Dual-Gate StructureHanbin Wang0Jinshun Bi1Mengxin Liu2Tingting Han3Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaNanjing Electronic Equipment Institute, Nanjing 210007, ChinaThis work investigates the different sensitivities of an ion-sensitive field-effect transistor (ISFET) based on fully depleted silicon-on-insulator (FDSOI). Using computer-aided design (TCAD) tools, the sensitivity of a single-gate FDSOI based ISFET (FDSOI-ISFET) at different temperatures and the effects of the planar dual-gate structure on the sensitivity are determined. It is found that the sensitivity increases linearly with increasing temperature, reaching 890 mV/pH at 75 °C. By using a dual-gate structure and adjusting the control gate voltage, the sensitivity can be reduced from 750 mV/pH at 0 V control gate voltage to 540 mV/pH at 1 V control gate voltage. The above sensitivity changes are produced because the Nernst limit changes with temperature or the electric field generated by different control gate voltages causes changes in the carrier movement. It is proved that a single FDSOI-ISFET can have adjustable sensitivity by adjusting the operating temperature or the control gate voltage of the dual-gate device.https://www.mdpi.com/2079-9292/10/13/1585ISFETsFDSOIssensitivitydual-gateTCAD simulation |
| spellingShingle | Hanbin Wang Jinshun Bi Mengxin Liu Tingting Han Simulation of FDSOI-ISFET with Tunable Sensitivity by Temperature and Dual-Gate Structure Electronics ISFETs FDSOIs sensitivity dual-gate TCAD simulation |
| title | Simulation of FDSOI-ISFET with Tunable Sensitivity by Temperature and Dual-Gate Structure |
| title_full | Simulation of FDSOI-ISFET with Tunable Sensitivity by Temperature and Dual-Gate Structure |
| title_fullStr | Simulation of FDSOI-ISFET with Tunable Sensitivity by Temperature and Dual-Gate Structure |
| title_full_unstemmed | Simulation of FDSOI-ISFET with Tunable Sensitivity by Temperature and Dual-Gate Structure |
| title_short | Simulation of FDSOI-ISFET with Tunable Sensitivity by Temperature and Dual-Gate Structure |
| title_sort | simulation of fdsoi isfet with tunable sensitivity by temperature and dual gate structure |
| topic | ISFETs FDSOIs sensitivity dual-gate TCAD simulation |
| url | https://www.mdpi.com/2079-9292/10/13/1585 |
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