Simulation of FDSOI-ISFET with Tunable Sensitivity by Temperature and Dual-Gate Structure
This work investigates the different sensitivities of an ion-sensitive field-effect transistor (ISFET) based on fully depleted silicon-on-insulator (FDSOI). Using computer-aided design (TCAD) tools, the sensitivity of a single-gate FDSOI based ISFET (FDSOI-ISFET) at different temperatures and the ef...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-06-01
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Series: | Electronics |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-9292/10/13/1585 |