Simulation of FDSOI-ISFET with Tunable Sensitivity by Temperature and Dual-Gate Structure

Simulation of FDSOI-ISFET with Tunable Sensitivity by Temperature and Dual-Gate Structure

This work investigates the different sensitivities of an ion-sensitive field-effect transistor (ISFET) based on fully depleted silicon-on-insulator (FDSOI). Using computer-aided design (TCAD) tools, the sensitivity of a single-gate FDSOI based ISFET (FDSOI-ISFET) at different temperatures and the ef...

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Bibliographic Details
Main Authors: Hanbin Wang, Jinshun Bi, Mengxin Liu, Tingting Han
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Electronics
Subjects:
ISFETs
FDSOIs
sensitivity
dual-gate
TCAD simulation
Online Access:https://www.mdpi.com/2079-9292/10/13/1585

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