Transmitters and receivers in SiGe BiCMOS technology for sensitive gas spectroscopy at 222 - 270 GHz

Transmitters and receivers in SiGe BiCMOS technology for sensitive gas spectroscopy at 222 - 270 GHz

This paper presents transmitter and receiver components for a gas spectroscopy system. The components are fabricated in IHP’s 0.13 μm SiGe BiCMOS technology. Two fractional-N phase-locked loops are used to generate dedicated frequency ramps for the transmitter and receiver and frequency shift keying...

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Bibliographic Details
Main Authors: K. Schmalz, N. Rothbart, M. H. Eissa, J. Borngräber, D. Kissinger, H.-W. Hübers
Format: Article
Language:English
Published: AIP Publishing LLC 2019-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5066261

Internet

http://dx.doi.org/10.1063/1.5066261

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