Generation of Oxygen-Related Defects in Crystal Silicon Processed by the RPD

Generation of Oxygen-Related Defects in Crystal Silicon Processed by the RPD

Suppression of the formation of crystal defects is essential for the realization of high-efficiency solar cells. The reactive plasma deposition (RPD) process introduces defects in the silicon crystal bulk and at the passivation layer/silicon crystal interface. This study suggests that oxygen impurit...

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Bibliographic Details
Main Authors: Tomohiko Hara, Iori Oura, Takuma Matsuzuki, Yoshio Ohshita
Format: Article
Language:English
Published: MDPI AG 2023-02-01
Series:Crystals
Subjects:
DLTS
reactive plasma deposition
silicon
interface
defects
passivation
Online Access:https://www.mdpi.com/2073-4352/13/2/310

Internet

https://www.mdpi.com/2073-4352/13/2/310

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