Highly Stretchable High‐Performance Silicon Nanowire Field Effect Transistors Integrated on Elastomer Substrates

Highly Stretchable High‐Performance Silicon Nanowire Field Effect Transistors Integrated on Elastomer Substrates

Abstract Quasi‐1D silicon nanowires (SiNWs) field effect transistors (FETs) integrated upon large‐area elastomers are advantageous candidates for developing various high‐performance stretchable electronics and displays. In this work, it is demonstrated that an orderly array of slim SiNW channels, wi...

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Bibliographic Details
Main Authors: Xiaopan Song, Ting Zhang, Lei Wu, Ruijin Hu, Wentao Qian, Zongguang Liu, Junzhuan Wang, Yi Shi, Jun Xu, Kunji Chen, Linwei Yu
Format: Article
Language:English
Published: Wiley 2022-03-01
Series:Advanced Science
Subjects:
elastomers
field effect transistor
silicon nanowire integration
stretchable electronics
Online Access:https://doi.org/10.1002/advs.202105623

Internet

https://doi.org/10.1002/advs.202105623

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