Highly Stretchable High‐Performance Silicon Nanowire Field Effect Transistors Integrated on Elastomer Substrates
Abstract Quasi‐1D silicon nanowires (SiNWs) field effect transistors (FETs) integrated upon large‐area elastomers are advantageous candidates for developing various high‐performance stretchable electronics and displays. In this work, it is demonstrated that an orderly array of slim SiNW channels, wi...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2022-03-01
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| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202105623 |
| _version_ | 1819157757781082112 |
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| author | Xiaopan Song Ting Zhang Lei Wu Ruijin Hu Wentao Qian Zongguang Liu Junzhuan Wang Yi Shi Jun Xu Kunji Chen Linwei Yu |
| author_facet | Xiaopan Song Ting Zhang Lei Wu Ruijin Hu Wentao Qian Zongguang Liu Junzhuan Wang Yi Shi Jun Xu Kunji Chen Linwei Yu |
| author_sort | Xiaopan Song |
| collection | DOAJ |
| description | Abstract Quasi‐1D silicon nanowires (SiNWs) field effect transistors (FETs) integrated upon large‐area elastomers are advantageous candidates for developing various high‐performance stretchable electronics and displays. In this work, it is demonstrated that an orderly array of slim SiNW channels, with a diameter of <80 nm, can be precisely grown into desired locations via an in‐plane solid‐liquid‐solid (IPSLS) mechanism, and reliably batch‐transferred onto large area polydimethylsiloxane (PDMS) elastomers. Within an optimized discrete FETs‐on‐islands architecture, the SiNW‐FETs can sustain large stretching strains up to 50% and repetitive testing for more than 1000 cycles (under 20% strain), while achieving a high hole carrier mobility, Ion/Ioff current ratio and subthreshold swing (SS) of ≈70 cm2 V−1 s−1, >105 and 134 ‐ 277 mV decade−1, respectively, working stably in an ambient environment over 270 days without any passivation protection. These results indicate a promising new routine to batch‐manufacture and integrate high‐performance, scalable and stretchable SiNW‐FET electronics that can work stably in harsh and large‐strain environments, which is a key capability for future practical flexible display and wearable electronic applications. |
| first_indexed | 2024-12-22T16:13:51Z |
| format | Article |
| id | doaj.art-68ede58c7be947e982c62ed5aa57c955 |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-12-22T16:13:51Z |
| publishDate | 2022-03-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-68ede58c7be947e982c62ed5aa57c9552022-12-21T18:20:25ZengWileyAdvanced Science2198-38442022-03-0199n/an/a10.1002/advs.202105623Highly Stretchable High‐Performance Silicon Nanowire Field Effect Transistors Integrated on Elastomer SubstratesXiaopan Song0Ting Zhang1Lei Wu2Ruijin Hu3Wentao Qian4Zongguang Liu5Junzhuan Wang6Yi Shi7Jun Xu8Kunji Chen9Linwei Yu10National Laboratory of Solid‐State Microstructures School of Electronics Science and Engineering Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 P. R. ChinaNational Laboratory of Solid‐State Microstructures School of Electronics Science and Engineering Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 P. R. ChinaNational Laboratory of Solid‐State Microstructures School of Electronics Science and Engineering Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 P. R. ChinaNational Laboratory of Solid‐State Microstructures School of Electronics Science and Engineering Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 P. R. ChinaNational Laboratory of Solid‐State Microstructures School of Electronics Science and Engineering Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 P. R. ChinaNational Laboratory of Solid‐State Microstructures School of Electronics Science and Engineering Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 P. R. ChinaNational Laboratory of Solid‐State Microstructures School of Electronics Science and Engineering Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 P. R. ChinaNational Laboratory of Solid‐State Microstructures School of Electronics Science and Engineering Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 P. R. ChinaNational Laboratory of Solid‐State Microstructures School of Electronics Science and Engineering Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 P. R. ChinaNational Laboratory of Solid‐State Microstructures School of Electronics Science and Engineering Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 P. R. ChinaNational Laboratory of Solid‐State Microstructures School of Electronics Science and Engineering Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 P. R. ChinaAbstract Quasi‐1D silicon nanowires (SiNWs) field effect transistors (FETs) integrated upon large‐area elastomers are advantageous candidates for developing various high‐performance stretchable electronics and displays. In this work, it is demonstrated that an orderly array of slim SiNW channels, with a diameter of <80 nm, can be precisely grown into desired locations via an in‐plane solid‐liquid‐solid (IPSLS) mechanism, and reliably batch‐transferred onto large area polydimethylsiloxane (PDMS) elastomers. Within an optimized discrete FETs‐on‐islands architecture, the SiNW‐FETs can sustain large stretching strains up to 50% and repetitive testing for more than 1000 cycles (under 20% strain), while achieving a high hole carrier mobility, Ion/Ioff current ratio and subthreshold swing (SS) of ≈70 cm2 V−1 s−1, >105 and 134 ‐ 277 mV decade−1, respectively, working stably in an ambient environment over 270 days without any passivation protection. These results indicate a promising new routine to batch‐manufacture and integrate high‐performance, scalable and stretchable SiNW‐FET electronics that can work stably in harsh and large‐strain environments, which is a key capability for future practical flexible display and wearable electronic applications.https://doi.org/10.1002/advs.202105623elastomersfield effect transistorsilicon nanowire integrationstretchable electronics |
| spellingShingle | Xiaopan Song Ting Zhang Lei Wu Ruijin Hu Wentao Qian Zongguang Liu Junzhuan Wang Yi Shi Jun Xu Kunji Chen Linwei Yu Highly Stretchable High‐Performance Silicon Nanowire Field Effect Transistors Integrated on Elastomer Substrates Advanced Science elastomers field effect transistor silicon nanowire integration stretchable electronics |
| title | Highly Stretchable High‐Performance Silicon Nanowire Field Effect Transistors Integrated on Elastomer Substrates |
| title_full | Highly Stretchable High‐Performance Silicon Nanowire Field Effect Transistors Integrated on Elastomer Substrates |
| title_fullStr | Highly Stretchable High‐Performance Silicon Nanowire Field Effect Transistors Integrated on Elastomer Substrates |
| title_full_unstemmed | Highly Stretchable High‐Performance Silicon Nanowire Field Effect Transistors Integrated on Elastomer Substrates |
| title_short | Highly Stretchable High‐Performance Silicon Nanowire Field Effect Transistors Integrated on Elastomer Substrates |
| title_sort | highly stretchable high performance silicon nanowire field effect transistors integrated on elastomer substrates |
| topic | elastomers field effect transistor silicon nanowire integration stretchable electronics |
| url | https://doi.org/10.1002/advs.202105623 |
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