High Power Mid-Infrared Quantum Cascade Lasers Grown on Si

High Power Mid-Infrared Quantum Cascade Lasers Grown on Si

This article details the demonstration of a strain-balanced, InP-based mid-infrared quantum cascade laser structure that is grown directly on a Si substrate. This is facilitated by the creation of a metamorphic buffer layer that is used to convert from the lattice constant of Si (0.543 nm) to that o...

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Bibliographic Details
Main Authors: Steven Slivken, Nirajman Shrestha, Manijeh Razeghi
Format: Article
Language:English
Published: MDPI AG 2022-09-01
Series:Photonics
Subjects:
quantum cascade laser
mismatched epitaxy
monolithic integration
Online Access:https://www.mdpi.com/2304-6732/9/9/626

Internet

https://www.mdpi.com/2304-6732/9/9/626

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