Controllable Uniform Green Light Emitters Enabled by Circular HEMT-LED Devices
This paper reports a monolithic integration of GaN high-electron-mobility transistor (HEMT) and green light-emitting diode (LED), where the circular HEMT is surrounded by a ring-shaped LED and two devices are seamlessly interconnected by the LED's n-GaN layer and the HEMT's two-dimensional...
Main Authors: | , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2018-01-01
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Series: | IEEE Photonics Journal |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/8449836/ |