A non-destructive channel stress characterization for gate-all-around nanosheet transistors by confocal Raman methodology

A non-destructive channel stress characterization for gate-all-around nanosheet transistors by confocal Raman methodology

<p indent="0mm">Non-destructive stress characterization is essential for gate-all-around (GAA) nanosheet (NS) transistors technology, while it is a big challenge to be realized on nanometer-sized GAA devices by using traditional Micro-Raman spectroscopy due to its light spot far exce...

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Bibliographic Details
Main Authors: Huang Ziqiang, Liu Tao, Yang Jingwen, Sun Xin, Chen Kun, Wang Dawei, Hu Hailong, Xu Min, Wang Chen, Xu Saisheng, Zhang David Wei
Format: Article
Language:English
Published: Science Press 2022-09-01
Series:National Science Open
Subjects:
non-destructive characterization
channel stress
gate all around (GAA)
confocal Raman
Online Access:https://www.sciengine.com/doi/10.1360/nso/20220027

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https://www.sciengine.com/doi/10.1360/nso/20220027

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