A non-destructive channel stress characterization for gate-all-around nanosheet transistors by confocal Raman methodology
<p indent="0mm">Non-destructive stress characterization is essential for gate-all-around (GAA) nanosheet (NS) transistors technology, while it is a big challenge to be realized on nanometer-sized GAA devices by using traditional Micro-Raman spectroscopy due to its light spot far exce...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Science Press
2022-09-01
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| Series: | National Science Open |
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| Online Access: | https://www.sciengine.com/doi/10.1360/nso/20220027 |
| _version_ | 1797808263784300544 |
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| author | Huang Ziqiang Liu Tao Yang Jingwen Sun Xin Chen Kun Wang Dawei Hu Hailong Xu Min Wang Chen Xu Saisheng Zhang David Wei |
| author_facet | Huang Ziqiang Liu Tao Yang Jingwen Sun Xin Chen Kun Wang Dawei Hu Hailong Xu Min Wang Chen Xu Saisheng Zhang David Wei |
| author_sort | Huang Ziqiang |
| collection | DOAJ |
| description | <p indent="0mm">Non-destructive stress characterization is essential for gate-all-around (GAA) nanosheet (NS) transistors technology, while it is a big challenge to be realized on nanometer-sized GAA devices by using traditional Micro-Raman spectroscopy due to its light spot far exceeding the device. In this work, a non-destructive stress characterization methodology of confocal Raman spectroscopy was proposed and performed for GAANS device fabrication. Channel stress evolution along the fabrication process was successfully characterized by designing high-density NS array and analyzing the linear scanned spectra in different structures. The related mechanism of stress evolution was systematically studied by Sentaurus process simulation. Additionally, applying this methodology on detecting the bending of suspended NS after channel release process was demonstrated. Therefore, this work might provide a promising solution to realize in-line characterization of channel stress in GAA NS transistors and process monitor of NS channel integrity.</p> |
| first_indexed | 2024-03-13T06:34:41Z |
| format | Article |
| id | doaj.art-695eeb28d6104fa3981118683a0c6b80 |
| institution | Directory Open Access Journal |
| issn | 2097-1168 |
| language | English |
| last_indexed | 2024-03-13T06:34:41Z |
| publishDate | 2022-09-01 |
| publisher | Science Press |
| record_format | Article |
| series | National Science Open |
| spelling | doaj.art-695eeb28d6104fa3981118683a0c6b802023-06-09T06:24:13ZengScience PressNational Science Open2097-11682022-09-01210.1360/nso/20220027eb33e642A non-destructive channel stress characterization for gate-all-around nanosheet transistors by confocal Raman methodologyHuang Ziqiang0Liu Tao1Yang Jingwen2Sun Xin3Chen Kun4Wang Dawei5Hu Hailong6Xu Min7Wang Chen8Xu Saisheng9Zhang David Wei10["School of Microelectronics, Fudan University, Shanghai 200433, China"]["School of Microelectronics, Fudan University, Shanghai 200433, China"]["School of Microelectronics, Fudan University, Shanghai 200433, China"]["School of Microelectronics, Fudan University, Shanghai 200433, China"]["School of Microelectronics, Fudan University, Shanghai 200433, China","Shanghai Integrated Circuit Manufacturing Innovation Center Company Ltd., Shanghai 200433, China"]["School of Microelectronics, Fudan University, Shanghai 200433, China"]["WITec (Beijing) Scientific Technology Co., Ltd., Beijing 100027, China"]["School of Microelectronics, Fudan University, Shanghai 200433, China","Shanghai Integrated Circuit Manufacturing Innovation Center Company Ltd., Shanghai 200433, China","Zhangjiang Fudan International Innovation Center, Shanghai 200433, China"]["School of Microelectronics, Fudan University, Shanghai 200433, China","Shanghai Integrated Circuit Manufacturing Innovation Center Company Ltd., Shanghai 200433, China","Zhangjiang Fudan International Innovation Center, Shanghai 200433, China"]["School of Microelectronics, Fudan University, Shanghai 200433, China"]["School of Microelectronics, Fudan University, Shanghai 200433, China","Shanghai Integrated Circuit Manufacturing Innovation Center Company Ltd., Shanghai 200433, China","Zhangjiang Fudan International Innovation Center, Shanghai 200433, China"]<p indent="0mm">Non-destructive stress characterization is essential for gate-all-around (GAA) nanosheet (NS) transistors technology, while it is a big challenge to be realized on nanometer-sized GAA devices by using traditional Micro-Raman spectroscopy due to its light spot far exceeding the device. In this work, a non-destructive stress characterization methodology of confocal Raman spectroscopy was proposed and performed for GAANS device fabrication. Channel stress evolution along the fabrication process was successfully characterized by designing high-density NS array and analyzing the linear scanned spectra in different structures. The related mechanism of stress evolution was systematically studied by Sentaurus process simulation. Additionally, applying this methodology on detecting the bending of suspended NS after channel release process was demonstrated. Therefore, this work might provide a promising solution to realize in-line characterization of channel stress in GAA NS transistors and process monitor of NS channel integrity.</p>https://www.sciengine.com/doi/10.1360/nso/20220027non-destructive characterizationchannel stressgate all around (GAA)confocal Raman |
| spellingShingle | Huang Ziqiang Liu Tao Yang Jingwen Sun Xin Chen Kun Wang Dawei Hu Hailong Xu Min Wang Chen Xu Saisheng Zhang David Wei A non-destructive channel stress characterization for gate-all-around nanosheet transistors by confocal Raman methodology National Science Open non-destructive characterization channel stress gate all around (GAA) confocal Raman |
| title | A non-destructive channel stress characterization for gate-all-around nanosheet transistors by confocal Raman methodology |
| title_full | A non-destructive channel stress characterization for gate-all-around nanosheet transistors by confocal Raman methodology |
| title_fullStr | A non-destructive channel stress characterization for gate-all-around nanosheet transistors by confocal Raman methodology |
| title_full_unstemmed | A non-destructive channel stress characterization for gate-all-around nanosheet transistors by confocal Raman methodology |
| title_short | A non-destructive channel stress characterization for gate-all-around nanosheet transistors by confocal Raman methodology |
| title_sort | non destructive channel stress characterization for gate all around nanosheet transistors by confocal raman methodology |
| topic | non-destructive characterization channel stress gate all around (GAA) confocal Raman |
| url | https://www.sciengine.com/doi/10.1360/nso/20220027 |
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