Atom devices based on single dopants in silicon nanostructures
<p>Abstract</p> <p>Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. Such technological trend brought us to a research stage on devices working with one or a few dopant atoms. In...
Main Authors: | , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
SpringerOpen
2011-01-01
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Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://www.nanoscalereslett.com/content/6/1/479 |